Cubic gallium nitride (GaN) is a promising material for high-frequency and optoelectronic devices due to its superior electronic properties and reduced polarization effects compared to its hexagonal counterpart.
However, growing high-quality cubic GaN is challenging due to the lack of a native substrate and the high density of defects arising from lattice mismatch and thermal expansion differences with available
substrates.
This study focuses on the growth of cubic GaN on 3C-SiC/Si(001). Since 3C-SiC is only available on silicon substrates, achieving high-quality 3C-SiC on Si(001) is itself a significant challenge. Improving the growth process and optimizing interface engineering can enhance the structural and electronic properties of cubic GaN films.

Background in semiconductor physics, materials science, or related fields.
Experience or interest in molecular beam epitaxy and material characterization techniques.
Strong motivation to tackle scientific challenges in epitaxial growth.

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Subsidized travel ticket

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