Research in a DFG project as a part of the priority programme "GaNius" in the area of modern wide-bandgap-power semiconductors. PhD thesis preparation is possible.

• Expansion of methods and test capabilities for trapping-related characterization of GaN power devices
• Experimental characterization and analysis of GaN-on-Si-semiconductors
• Analysis of long-term stability of GaN semiconductors
• Characterization of GaN-semiconductors using temperatures up to 175 °C

• Excellent completed university degree (Master, Diplom or equivalent) in electrical engineering;
• We expect very good knowledge of power electronics, wide-bandgap-power semiconductors, measurement techniques and experiences in electronic hardwa development
• You'll need practical experience in programming C2000 microcontrollers
• Good knowledge of German and/or English (written and spoken) required; willingness to acquire the respective missing language skills
• We expect solid expertise of scientific work and writing is desirable
• Practical experience in the development of electronic-hardware desirable

Please send your application with the reference number and the usual documents including language certificates by e-mail to Prof. Dr. Sibylle Dieckerhoff (sekr@pe.tu-berlin.de).

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To ensure equal opportunities between women and men, applications by women with the required qualifications are explicitly desired. Qualified individuals with disabilities will be favored. The TU Berlin values the diversity of its members and is committed to the goals of equal opportunities. Applications from people of all nationalities and with a migration background are very welcome.